کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7993134 | 1516152 | 2018 | 25 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Inhomogeneity of barrier heights of transparent Ag/ITO Schottky contacts on n-type GaN annealed at different temperatures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
We report on the formation of high barrier-height and transparent Ag/ITO Schottky contacts on n-GaN (ndâ¯=â¯5â¯Ãâ¯1018â¯cmâ3) for optoelectronic and transparent electronic devices. Calculations using the thermionic emission model-based current-voltage characteristics of the samples annealed at various temperatures showed small Schottky barrier heights (SBHs) of 0.31-0.37â¯eV and ideality factors of 1.84-2.19. Conventional activation energy plot showed greatly smaller Richardson constant than the theoretical value. To understand such abnormality, the modified Richardson plot, a model of lateral SBH variation with Gaussian distribution, and capacitance-voltage method were used, where their SBHs were estimated to be in the range 0.74-0.93â¯eV. Together with the temperature-dependent SBHs and ideality factors, these results imply that SBH behavior could be explained in terms of barrier inhomogeneity at the interfaces. The Ag/ITO samples annealed at 500â¯Â°C transmitted 80.9% at 560â¯nm. The X-ray photoemission spectroscopy (XPS) Ga 2p core level spectra from the interfaces of the samples shifted toward either higher or lower energies. Scanning transmission electron microscopy (STEM)-energy dispersive X-ray spectroscopy mapping results revealed the outdiffusion of Ga atoms from n-GaN when annealed at 500â¯Â°C. Based on the electrical, XPS and STEM results, the annealing temperature dependence of the SBHs is described and discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 742, 25 April 2018, Pages 66-71
Journal: Journal of Alloys and Compounds - Volume 742, 25 April 2018, Pages 66-71
نویسندگان
Su-Jung Yoon, Jeeyun Lee, Tae-Yeon Seong,