Self-rectifying resistive switching behavior observed in Al2O3-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode

Self-rectifying resistive switching behavior observed in Al2O3-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 742, 25 April 2018, Pages 822-827

Hee-Dong Kim, Sungho Kim, Min Ju Yun,