کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7993889 | 1516154 | 2018 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing effect on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN MIS device
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, the effect of annealing on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN metal-insulator-semiconductor (MIS) structure memristor is demonstrated. The results show that the stability and repeatability of the bipolar resistive switching are greatly improved in annealed Ti/Si3N4/n-GaN MIS devices. The mechanism involved is revealed by both conductive force microscopy (CFM) and x-ray photoelectron spectroscopy (XPS). It is confirmed to in-situ local Ti doping in Si3N4 by thermal annealing and can be ascribed to the local Ti dopants in the Si3N4 bonding the N atoms at positive bias by electro-reductive process that benefits to form stable nanoscale Si filaments. On the contrary, the Si filaments rupture by recombining with N atoms near the n-GaN side at negative bias. The proposed device is apt to integrate with a GaN-based high electron mobility transistor (HEMT) to structure a one-transistor-one-resistor (1T1R) nonvolatile memory cell, which is expected to develop the application of the nitride semiconductors in data storage in addition to the applications in light-emitting diodes, laser diodes, power devices, and photodetectors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 740, 5 April 2018, Pages 816-822
Journal: Journal of Alloys and Compounds - Volume 740, 5 April 2018, Pages 816-822
نویسندگان
Y.R. Chen, Z.M. Li, Z.W. Zhang, L.Q. Hu, H. Jiang, G.Q. Miao, H. Song,