کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7993986 | 1516156 | 2018 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Superlattice-like Sb-Ge thin films for high thermal stability and low power phase change memory
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
The thermal properties of Sb-Ge superlattice-like thin films have been experimentally studied for phase change memory. The Sb-Ge superlattice-like thin films have a high crystallization temperature (223 °C). The interdiffusion coefficient Dλ was determined by measuring the intensity of the low-angle X-ray diffraction arising from the modulation as a function of annealing time. The temperature dependence in the temperature range 80-200 °C is described by Dλ = 8.3 à 10â24exp(-0.42 eV/kT) m2/s. The thermal stability of Sb-Ge superlattice-like thin films can also dramatically be improved with the increase of the temperature. The density variation of Sb-Ge superlattice-like thin films changes by only around 8% between amorphous and crystalline states, which is very important for device reliability. The threshold current and threshold voltage of a cell based on Sb-Ge are 8.15 μA, 1.07 V, respectively. The lower RESET power is presented in the PCM cells of Sb-Ge superlattice-like thin films, benefiting from its high resistivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 738, 25 March 2018, Pages 145-150
Journal: Journal of Alloys and Compounds - Volume 738, 25 March 2018, Pages 145-150
نویسندگان
Shiyu Chen, Ke Yang, Weihua Wu, Jiwei Zhai, Zhitang Song,