کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7994584 | 1516160 | 2018 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The role of indium composition on thermo-electric properties of InGaN/GaN heterostructures grown by MOCVD
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Thermo Electric (TE) properties of InGaN/GaN heterostructure with different Indium compositions grown by Metal Organic Chemical Vapour Deposition (MOCVD) are investigated. Room temperature thermoelectric studies reveals that increasing indium composition (from 6% to 19%) in the InGaN/GaN heterostructure lead to a decrease in Seebeck coefficient (S) due to sharpening of bandgap which in turn increases TE figure of merit. Seebeck coefficient, Power factor and Figure of Merit of the InGaN/GaN heterostructured thin films shows significant enhancement at higher temperature up to 420 K as compared to room temperature measurement. Promising results on the TE properties of as grown InGaN/GaN heterostructures were observed with Figure of Merit (ZT) value of 0.15 at 420 K for In0.19Ga0.81N sample. The results indicate that InGaN material system could be potentially imparted for high temperature TE devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 734, 15 February 2018, Pages 48-54
Journal: Journal of Alloys and Compounds - Volume 734, 15 February 2018, Pages 48-54
نویسندگان
S. Surender, S. Pradeep, K. Prabakaran, S.M. Sumithra, Shubra Singh, K. Baskar,