Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature

Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 691, 15 January 2017, Pages 504-513

J. Gao, G. He, M. Liu, J.G. Lv, Z.Q. Sun, C.Y. Zheng, P. Jin, D.Q. Xiao, X.S. Chen,