کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7996489 1516207 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improvement of p-type conductivity in Al-rich AlGaN substituted by MgGaδ-doping (AlN)m/(GaN)n (m≥n) superlattice
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Improvement of p-type conductivity in Al-rich AlGaN substituted by MgGaδ-doping (AlN)m/(GaN)n (m≥n) superlattice
چکیده انگلیسی
The challenge of p-type doping in Al-rich AlGaN is investigated based on first-principles calculations. We find that the p-type conductivity can be improved by replacing Al-rich AlGaN with MgGaδ-doping (AlN)m/(GaN)n (m ≥ n) superlattice (SL). The formation energy Ef is the lowest and acceptor activation energy EA is the smallest for Mg substituting Ga in the SL. The EA increases if the doping position moves from GaN to AlN layer. Moreover, EA decreases with increasing the number of GaN monolayers. The EA can be reduced from 0.48 eV in AlN to 0.26 eV in (AlN)5/(GaN)1, 0.25 eV in (AlN)1/(GaN)1, 0.24 eV in (AlN)4/(GaN)2 and 0.22 eV in (AlN)3/(GaN)3 SLs. This will lead to a high hole concentration in the order of 1018 cm−3 at room temperature, which is favorable for AlGaN-based deep ultraviolet optoelectronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 686, 25 November 2016, Pages 484-488
نویسندگان
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