کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7996676 | 1516207 | 2016 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoelectrochemical properties of Bi2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photoelectrochemical properties of Bi2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method Photoelectrochemical properties of Bi2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method](/preview/png/7996676.png)
چکیده انگلیسی
Bi2S3 nanoparticles (NPs) in the form of thin films were deposited on fluorine doped SnO2 (FTO) coated conducting glass substrates by successive ionic layer adsorption and reaction (SILAR) at room temperature without annealing. The absorption coefficient could reach to the order of 106Â cmâ1 in the visible and NIR region, and the highest one was 5Â ÃÂ 106Â cmâ1. The highest photocurrent density of the synthesized Bi2S3 thin films (TFs) could maintain 0.8Â mA/cm2 within 700Â s under the light intensity kept at 30Â mW/cm2. The photocurrent density is among the highest reported for any Bi2S3 photoelectrode without annealing to date. The photocurrent display little decrease during 4000Â s of testing under illumination. The n-type Bi2S3 thin films display a reasonable photoactivity and photostablity under illumination and are thus promising candidates for photoelectrochemical applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 686, 25 November 2016, Pages 684-692
Journal: Journal of Alloys and Compounds - Volume 686, 25 November 2016, Pages 684-692
نویسندگان
Ying Wang, Jiangyu Chen, Liangxing Jiang, Kaile Sun, Fangyang Liu, Yanqing Lai,