کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7997737 | 1516221 | 2016 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of magnetic annealing on the ferroelectric and dielectric properties of BaTiO3-CoFe2O4 multilayer films prepared by chemical solution deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of magnetic annealing on the ferroelectric and dielectric properties of BaTiO3-CoFe2O4 multilayer films prepared by chemical solution deposition Influence of magnetic annealing on the ferroelectric and dielectric properties of BaTiO3-CoFe2O4 multilayer films prepared by chemical solution deposition](/preview/png/7997737.png)
چکیده انگلیسی
BaTiO3-CoFe2O4 multilayer thin films with different thickness are deposited on Pt/Ti/SiO2/Si (100) substrates via CSD method. The magnetic annealing effect on the ferroelectric and dielectric properties of the multilayer thin films are investigated. It is found that both the ferroelectric and dielectric properties of the films are improved by the magnetic annealing. The changes of these two properties can be explained based on the variations of grain size, grain boundary, internal stress/strain as well as domain wall motion. A serial capacitor model is also used to analyze the influence of magnetic annealing on the dielectric properties. Leakage current densities are decreased after magnetic annealing and then fitted and explained with different leakage conduction mechanisms. Finally, comparing the ferroelectric and dielectric properties of the films with and without magnetic annealing, it can be concluded that the magnetic annealing effect is more significant on the thinner films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 672, 5 July 2016, Pages 536-542
Journal: Journal of Alloys and Compounds - Volume 672, 5 July 2016, Pages 536-542
نویسندگان
Yuqiang Dai, Qianqian Gao, Jianming Dai, Xianwu Tang, Liguo Yang, Chaojun Cui, Xianchang Li, Chengbo Li, Zhendong Liu,