کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7998260 1516249 2015 27 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhancement of thermoelectric properties in Sn doped (In0.95Lu0.05)2O3
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Enhancement of thermoelectric properties in Sn doped (In0.95Lu0.05)2O3
چکیده انگلیسی
In this work, thermoelectric properties in Sn and Lu co-doped In2O3 were investigated. The materials of (In0.95−xLu0.05Snx)2O3 (x = 0, 0.001, 0.01 and 0.04) were synthesized by using a co-precipitation method followed by spark plasma sintering (SPS) process. Sn(+IV) was strategically selected to substitute In(+III) for increasing the electrical conductivity of 5% Lu doped In2O3 [(In0.95Lu0.05)2O3] while remaining the low thermal conductivity of the compound. It was found that the carrier concentration could be increased from 2.1 × 1017 cm−3 to 3.7 × 1020 cm−3 by doping 1% Sn into (In0.95Lu0.05)2O3. As a result, 1% Sn increased power factor with the value of ∼5 × 10−4 W m−1 K−2 at 973 K, which was 5 times higher than that of (In0.95Lu0.05)2O3. It is interesting to note that the band gap energies were widened in the samples doped with 0.1% Sn and 1% Sn due to the Burstein-Moss (BM) shift. Sn doping decreased the thermal conductivity of (In0.95Lu0.05)2O3. Among the as-prepared samples, 0.1% Sn doped (In0.95Lu0.05)2O3 possessed the highest ZT of ∼0.15 at 973 K, which was almost 3 times higher than that of (In0.95Lu0.05)2O3.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 644, 25 September 2015, Pages 119-123
نویسندگان
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