Possible room temperature ferromagnetism in silicon doped tellurium semiconductor

We have found direct evidence of ferromagnetism in a silicon doped tellurium sample, a new type of magnetic semiconductor that is not based on any oxide or nitride. Room temperature ferromagnetism was very apparent from the magnetization hysteresis. Isothermal magnetization hysteresis loop and differences in ZFC and FC branches of magnetization shows that the ferromagnetic transition temperature is above room temperature. Observation of magnetization hysteresis only at low magnetic fields is indicative of smaller domain size. Average estimated magnetic moment μ per domain is 2.6 μB. The origin of ferromagnetism could be ascribed to modification of electronic band or generation of local magnetic moment by silicon doping into the parent tellurium lattice.