کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8000199 1516272 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of channel thickness on the field effect mobility of ZnO-TFT fabricated by sol gel process
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Effect of channel thickness on the field effect mobility of ZnO-TFT fabricated by sol gel process
چکیده انگلیسی
In this study, bottom-gate structured ZnO TFTs were fabricated on pSi/SiO2 substrate. ZnO active layers with different thickness were deposited by using sol gel spin coating method and the electrical performances of the obtained TFTs were investigated regarding the thickness of the channel layer. The effects of channel thickness on the structural and morphological properties of ZnO were examined. The mobility values of TFTs were significantly improved by increasing the thickness of active channel layer and the highest mobility of ZnO TFTs was obtained by 1.09 cm2/V s for 140 nm layer. ZnO TFTs showed a high off-current and this current increased as the channel thickness increased.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 621, 5 February 2015, Pages 189-193
نویسندگان
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