کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8000875 | 1516277 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping Improving the optoelectronic properties of gallium ZnO transparent conductive thin films through titanium doping](/preview/png/8000875.png)
چکیده انگلیسی
The optoelectronic characteristics of gallium-doped ZnO ternary alloy transparent conductive oxide were improved through titanium (Ti) doping, and showed enhanced optoelectronic properties, and crystallite quality by radio frequency magnetron sputtering. The room-temperature photoluminescence measurement showed improved near band edge emission for ZnO peaks, and suppressed deep defect level emission at the green light band. The study results show that the lowest thin film resistivity was 4.95 Ã 10â4 Ω-cm, with a mobility and carrier concentration of 4.8 cm2/V-s and 2.64 Ã 1021 cmâ3, respectively. The superior carrier concentration of Ti-doped GZO alloys (>1021 cmâ3) with high figure of merit (35.3 Ã 10â3 Ωâ1), demonstrating the pronounced contribution made by Ti doping, and is highly suitable for the optoelectronic device applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 616, 15 December 2014, Pages 268-274
Journal: Journal of Alloys and Compounds - Volume 616, 15 December 2014, Pages 268-274
نویسندگان
Wei-Sheng Liu, Shen-Yu Wu, Chao-Yu Hung, Ching-Hsuan Tseng, Yu-Lin Chang,