High-throughput identification of higher-κ dielectrics from an amorphous N2-doped HfO2-TiO2 library

High-throughput sputtering was used to fabricate high-quality, amorphous, thin HfO2-TiO2 and N2-doped HfO2-TiO2 (HfON-TiON) gate dielectric libraries. Electron probe energy dispersive spectroscopy was used to investigate the structures, compositions, and qualities of the dielectric and interfacial layers of these libraries to determine their electrical properties. A κ value of approximately 54, a leakage current density <10−6 A/cm2, and an equivalent oxide thickness of approximately 1 nm were identified in an HfON-TiON library within a composition range of 68-80 at.% Ti. This library exhibits promise for application in highly advanced metal-oxide-semiconductor (higher-κ) gate stacks.