کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8001479 | 1516284 | 2014 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Vertically aligned single-crystalline ultra-thin CuO nanosheets: Low-temperature fabrication, growth mechanism, and excellent field emission
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Vertically aligned single-crystalline ultra-thin CuO nanosheets: Low-temperature fabrication, growth mechanism, and excellent field emission Vertically aligned single-crystalline ultra-thin CuO nanosheets: Low-temperature fabrication, growth mechanism, and excellent field emission](/preview/png/8001479.png)
چکیده انگلیسی
An effective and one-step solvothermal process is developed to fabricate vertically aligned ultra-thin CuO nanosheets with high-quality single crystalline structure on Cu substrate at low temperature of 90 °C. The thickness and size of the prepared nanosheets can be tailored by changing reaction duration and temperature. On the basis of experimental results, a possible mechanism for the formation of the vertically aligned ultra-thin CuO nanosheets is speculated. Moreover, the prepared ultra-thin CuO nanosheets exhibit excellent field emission (FE) properties, a low turn-on electric field of 2.19 V/μm and a high current density of 4.5 mA/cm2 at 8.23 V/μm can be realized from the optimized sample. More importantly, the optimized sample also shows excellent FE stability with fluctuations within 2%. Based on temperature-dependent FE measurement, the stable FE property can be attributed to the low local heating effects of sheet-like CuO emitters, originating from their superior heat dissipation ability and low Joule heating.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 609, 5 October 2014, Pages 253-261
Journal: Journal of Alloys and Compounds - Volume 609, 5 October 2014, Pages 253-261
نویسندگان
Ai-Zhen Liao, Wei-Dong Zhu, Jian-Biao Chen, Xu-Qiang Zhang, Cheng-Wei Wang,