Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals

► Thermoluminescence measurements have been carried out on Ga0.75In0.25Se crystals. ► Four defects centers located at 9, 45, 54 and 60 meV have been found. ► Capture cross sections and attempt-to-escape frequencies of traps were calculated. ► Results of TL experiments were compared with those of TSC and PL.