کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8012793 | 1517161 | 2018 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, nickel oxide (NiO) film was prepared on 4H-SiC (0001) by radio frequency magnetron sputtering to form NiO/4H-SiC p-n heterojunction for the first time. XRD results indicated NiO film had (2 0 0), (2 2 0), and (0 2 0) oriented crystal structures and SEM results showed homogeneous distribution of small grains on 4H-SiC substrate. The optical band gap for NiO was calculated as 3.75â¯eV by UV-visible absorption spectra. The current-voltage characteristic of the NiO/4H-SiC p-n heterojunction showed a typical rectification behavior with a turn-on voltage of 1.4â¯V. The discontinuities of the valence band edge and the conduction band edge were estimated to be 1.15â¯eV and 1.64â¯eV, respectively. The differences in barrier heights for holes and electrons indicated an improved hole injection capacity of NiO/4H-SiC p-n heterojunction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 227, 15 September 2018, Pages 315-317
Journal: Materials Letters - Volume 227, 15 September 2018, Pages 315-317
نویسندگان
Xi Wang, Hongbin Pu, Dandan Hu, Yuan Zang, Jichao Hu, Yong Yang, Chunlan Chen,