کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8013494 | 1517167 | 2018 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A low cost and single source atmospheric pressure vapor phase epitaxy of ZnS for thin film photovoltaic applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A novel and low cost vapor phase epitaxy (VPE) method using a single non-volatile source has been used to deposit ZnS thin films on soda lime glass substrates. Utilization of the non-volatile source eliminates the need for expensive and sophisticated reactors commonly used in conventional VPE. Instead, this experiment was carried out using inexpensive and easily attainable apparatus. The vapor phase reaction process described is also more compatible to the industry standard dry deposition processes of the other layers in the thin film solar cell stack for Cu(In,Ga)Se2 (CIGS), Cu2ZnSnS4 (CZTS) and CdTe photovoltaic (PV) devices. In this experiment, the substrate temperature was varied from 400 to 480â¯Â°C and the ZnS thin films produced were analyzed using X-ray diffractometry (XRD), optical spectroscopy, field emission scanning electron microscope (FESEM) and Hall effect measurement system. The films were found to be hexagonal structured except for the film deposited at 480â¯Â°C, where the film was found to be cubic. The thickness, bandgap and resistivity of the deposited films ranged from 54 to 351â¯nm, 3.18 to 3.83â¯eV and 2â¯Ãâ¯103 to 1.6â¯Ãâ¯104â¯Î©Â·cm respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 221, 15 June 2018, Pages 216-219
Journal: Materials Letters - Volume 221, 15 June 2018, Pages 216-219
نویسندگان
Y. Yusoff, P. Chelvanathan, N. Kamaruddin, Md. Akhtaruzzaman, N. Amin,