کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8013822 | 1517169 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical properties of Cu2ZnSnS4 thin films deposited by spray-sandwich technique
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Cu2ZnSnS4 (CZTS) thin films were prepared by “Spray Sandwich” technique. The structural, surface morphological and electrical properties of the films were carried out by means of X-ray diffraction, scanning electron microscopy and impedance spectroscopy measurement techniques. The X-ray diffraction (XRD) pattern showed the characteristic peaks at (1â¯1â¯2), (2â¯2â¯0) and (3â¯1â¯2) planes, which correspond to Cu2ZnSnS4, thin films. The Nyquist impedance spectra exhibited depressed semicircles with equivalent circuit function as typical parallel RC. The activation energy value calculated from angular frequency relaxation and DC conductivity proved that the conduction mechanism was thermally activated by hopping between localized states. Moreover, the analysis of frequency and temperature dependence of conductivity support the correlated barrier hopping (CBH) model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 219, 15 May 2018, Pages 194-197
Journal: Materials Letters - Volume 219, 15 May 2018, Pages 194-197
نویسندگان
N. Bitri, S. Mahjoubi, M. Abaab, I. Ly,