Improved photoelectronic performance of graphene, polymer and PbSe quantum dot infrared photodetectors

We fabricated a highly sensitive infrared (IR) layer-heterojunction field effect phototransistor (LH-FEpT) by integrating poly [2-methoxy-5-(20-ethylhexyloxy-p-phenylenevinylene)] (MEH-PPV)/PbSe quantum dots composite with monolayer graphene. The phototransistor exhibited high photosensitive in a wide spectral range from visual to infrared. The graphene/MEH-PPV/PbSe QDs based FEpT (GMQ-FEpT) show high carrier mobility (μ) up to 1800 cm2 V−1 s−1, high photo responsivity (R) about 133 A/W at a light intensity (4.9 mW/cm2), high external quantum efficiency (EQE) (up to 2×104%) and high specific detectivity (D*) (9.8×1010 Jones) under illumination of 808 nm laser.