کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8017788 | 1517227 | 2015 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Layered structure of MoS2 investigated using electron energy loss spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Layered structure of MoS2 investigated using electron energy loss spectroscopy Layered structure of MoS2 investigated using electron energy loss spectroscopy](/preview/png/8017788.png)
چکیده انگلیسی
Transition metal dichalcogenide MoS2 has attracted significant interest for its unique electronic, optical and catalytic properties. Layered crystalline MoS2 can be mechanically exfoliated into single monolayers. With the advancement of microscopic and analytical techniques, significant insight knowledge has been obtained on the structure and properties of two-dimensional (2D) materials. In this paper, the authors have carried out high resolution transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) to investigate MoS2 layers transferred on silicon substrate. Due to the weak nature of van der Waal forces between the S-S layers, stability of layers poses a challenge at high electron acceleration voltages. Dark field STEM (DF-STEM) and EELS, used on 11 layers of MoS2, reveal an interlayer spacing of ~6.25Â Ã
, which is consistent with the reported crystal structure of MoS2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 161, 15 December 2015, Pages 96-99
Journal: Materials Letters - Volume 161, 15 December 2015, Pages 96-99
نویسندگان
David MacMahon, Andrea Brothers, Karine Florent, Santosh Kurinec,