کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8018041 | 1517231 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Degradation and device physics modeling of TiO2/CZTS ultrathin film photovoltaics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Degradation and device physics modeling of TiO2/CZTS ultrathin film photovoltaics Degradation and device physics modeling of TiO2/CZTS ultrathin film photovoltaics](/preview/png/8018041.png)
چکیده انگلیسی
A hybrid solar cell of a nonporous n-type-TiO2 nanolayer and a p-type semiconductor Cu2(Zn,Sn)Se4 (CZTS) ultrathin film has been numerically simulated using SCAPS-1D program. The device physics including carrier generation, charge collection and current-voltage characteristics are investigated and the degradation rate of the electrical parameters under the normal operation condition is considered through a time dependent approach. The simulation analyzes are based on the experimental data reported in literature. An ultrathin (dâ¤1 μm) instead of a thin CZTS layer is considered due to high absorption coefficient of such materials which allows a sub-micron layer to be adequate for complete photoabsorption. The defect density/levels significantly reduce the efficiency over time. The results are interpreted with a device physics proposed in in literature on the tunneling recombination at the interface of such structure. The TiO2 layer was selected to be 50 nm only.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 157, 15 October 2015, Pages 123-126
Journal: Materials Letters - Volume 157, 15 October 2015, Pages 123-126
نویسندگان
M. Houshmand, Hamid Esmaili, M. Hossein Zandi, Nima E. Gorji,