Construction of high-quality CdSe NB/graphene Schottky diodes for optoelectronic applications

High-quality CdSe nanobelts (NBs) and monolayer graphene were synthesized via a chemical vapor deposition (CVD) method. Schottky diodes based on CdSe NBs/graphene have been fabricated and investigated. The as-fabricated Schottky diodes exhibit excellent rectification characteristic with rectification ratio up to 103 within ±2 V in the dark and distinctive photoresponse to light switching between on and off. Further analysis reveals that the Schottky diodes were highly sensitive to light illumination with very good stability, reproducibility and fast response speeds of 47/122 μs. Our results suggest that CdSe NBs/graphene Schottky diodes have potential future application in integrated nano-optoelectronic systems.