Synthesis of nitrogen-doped graphene by the thermal chemical vapor deposition method from a single liquid precursor

In this work we report the synthesis of nitrogen-doped graphene using an ambient pressure chemical vapor deposition technique on polycrystalline Ni substrates with a single liquid precursor, as the source of both carbon and nitrogen. Nitrogen atom substitution of the so-formed graphene was confirmed by X-ray photoelectron spectroscopy. The signal from sp2 bonded carbon atoms decreased in the nitrogen-doped graphene at longer deposition times. Spatially resolved Raman mapping results and transmission electron microscopy images show that the nitrogen-doped graphene formed with varying thickness from a monolayer to >10 layers. The effects of growth temperature and deposition time on the level of nitrogen doping, number of layers, and the quality of the nitrogen-doped graphene layer were investigated.