کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8022199 | 1517282 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis of chalcopyrite CuIn1âxGaxSe2 alloys for photovoltaic application by a novel melting method
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CuIn1âxGaxSe2 (CIGS) compounds used for the fabrication of thin-film solar cell absorber layers have been synthesized by a novel melting method which is easily controlled and practical. Based on vapor phase transport caused by the temperature gradient built, the quaternary CIGS alloy was prepared from the low-cost elementary Cu, In, Ga and Se in a closed quartz tube at 1100 °C for 3 h. Through various characterization methods, the as-synthesized alloy with crystal grains sized 100-150 µm presented a desirable chemical composition and a single-phase chalcopyrite structure. Furthermore, the CIGS absorber layer made from this material turned out to be high-quality with a correct phase and large nanocrystals, indicating great application potential of the proposed method in low-cost solar cell fabrication.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 106, 1 September 2013, Pages 52-55
Journal: Materials Letters - Volume 106, 1 September 2013, Pages 52-55
نویسندگان
Teng Chen, Youwen Zhao, Zhiyuan Dong, Jun Yang, Tong Liu,