Growth of controlled thickness graphene by ion implantation for field-effect transistor

In contrast to the commonly employed chemical vapor deposition growth on nickel bulk that leads to multilayer graphene formation by carbon segregation, we present an approach to synthesize high quality graphene on Ni through carbon ion implantation and post annealing. Through tuning the dose of carbon ions with the aid of ion beam technology, followed by high-temperature annealing and fast cooling down, graphene layer with the desired thickness has been achieved. Raman, HRTEM and optical transmittance spectra are used to determine both the quality and thickness of the graphene film. We have fabricated and characterized the field effect transistors to determine the electrical properties of the synthesized graphene film. Furthermore, our technique can utilize standard equipments available in semiconductors technology.