کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8023288 | 1517533 | 2018 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved oxidation resistance of zirconium at high-temperature steam by magnetron sputtered Cr-Al-Si ternary coatings
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Accident tolerant fuel claddings are extremely urgent to increase the safety margin of light water reactors. In this work, Cr-Al-Si ternary alloy coatings were proposed to increase high-temperature oxidation resistance of zirconium claddings. Cr62.8Al27.9Si9.3 coatings were deposited on Zr coupons by magnetron sputtering, followed by evaluation of their oxidation resistance and adhesion strength under high-temperature steam. No oxidation of the Zr coupons underneath the coatings occurred in the 1000â¯Â°C steam for 15â¯min. In the 1200â¯Â°C steam for 30â¯min, both the weight gain and the thickness of the α-Zr(O) layer decreased 40% and 50%, related to those of the uncoated coupons, respectively. Moreover, the adhesion of coating and substrate was improved after the high-temperature oxidation, with the adhesion strength of the oxidized coating - Zr substrate more than ~50â¯N. It was further observed that the Al and Si atoms preferentially diffused outwards the surface to form a layer of oxides, and the atoms diffused towards the Zr substrate to form a mixed interlayer. The outside barrier layer and the inter-diffused layer could contribute to the enhanced oxidation resistance and the adhension of the coated Zr coupons, which would be highly desirable for the zirconium claddings.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 350, 25 September 2018, Pages 841-847
Journal: Surface and Coatings Technology - Volume 350, 25 September 2018, Pages 841-847
نویسندگان
Yue Dong, Fangfang Ge, Fanping Meng, Gongshu Zhao, Jie Zhou, Zhaoping Deng, Qing Huang, Feng Huang,