کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8023832 | 1517539 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Solid oxide fuel cells incorporating doped lanthanum gallate films deposited by radio-frequency magnetron sputtering at various Ar/O2 ratios and annealing conditions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Solid oxide fuel cells incorporating doped lanthanum gallate films deposited by radio-frequency magnetron sputtering at various Ar/O2 ratios and annealing conditions Solid oxide fuel cells incorporating doped lanthanum gallate films deposited by radio-frequency magnetron sputtering at various Ar/O2 ratios and annealing conditions](/preview/png/8023832.png)
چکیده انگلیسی
In this study, we prepared solid oxide fuel cells (SOFCs) incorporating a dense La0.87Sr0.13Ga0.88Mg0.12O3âδ (LSGM) film deposited by radio-frequency (RF) magnetron sputtering on an NiO-Sm0.2Ce0.8O2âδ (NiO-SDC) anode substrate. The influences of the Ar-O2 deposition atmosphere and the subsequent annealing conditions on the characteristics of the LSGM film and on the performance of the resulting SOFCs was investigated. LSGM targets with La0.76Sr0.24Ga0.63Mg0.37O3âδ composition and a deposition atmosphere with Ar/O2 ratios ranging from 10/0 to 5/5 were used throughout the study. Owing to the amorphous nature of the as-deposited LSGM films, the film deposited in an Ar/O2â¯=â¯10/0â¯atm required post-annealing at 950â¯Â°C for 4â¯h for crystallization and removal of the SrLaGa2O7 content, while the films deposited at lower Ar/O2 ratios required higher crystallization temperatures: for instance, the films deposited at Ar/O2â¯=â¯6/4 had to be annealed at 1100â¯Â°C for 2â¯h. The anode-supported substrates were then screen-printed with a La0.6Sr0.4Co0.2Fe0.8O3âδ (LSCF)-LSGM cathode layer and fired to form SOFC cells. The single cell incorporating an LSGM film with La0.87Sr0.13Ga0.88Mg0.12O3âδ composition deposited in a pure Ar atmosphere exhibited the lowest cell resistance and thus the highest maximum power density (MPD) at all operating temperatures. The total resistance of the single cell incorporating a 4.3â¯Î¼m-thick LSGM film decreased from 0.386 to 0.121â¯Î©â¯cm2 as the temperature increased from 650 to 850â¯Â°C, and the open circuit voltages ranged from 0.941 to 0.861â¯V. The maximum power density of the single cell was 0.422, 0.736, and 1.105â¯Wâ¯cmâ2 at 650, 750, and 850â¯Â°C, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 344, 25 June 2018, Pages 507-513
Journal: Surface and Coatings Technology - Volume 344, 25 June 2018, Pages 507-513
نویسندگان
Yi-Xin Liu, Sea-Fue Wang, Yung-Fu Hsu, Wan-Yun Yeh,