کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8024421 | 1517548 | 2018 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of Pd ion implantation and Si addition on wettability of Al/SiC system
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
6H-SiC (0001) monocrystal substrates were implanted with 20Â keV Pd ions at three doses of 5Â ÃÂ 1015, 5Â ÃÂ 1016 and 5Â ÃÂ 1017Â ions/cm2 at room temperature. The surface characteristics of Pd-implanted SiC substrates were analyzed by Monte Carlo simulation software SRIM-2008 and Raman spectroscopy. The effects of the Pd ion implantation into the monocrystal substrate and of the Si additions (4.8, 11.6, 19.4 and 29.2Â at.%) into Al on wettability of Al/6H-SiC system were investigated using the sessile drop technique in a high vacuum at 1323Â K, and the surface and interfacial behaviors were analyzed and discussed. The experimental results showed that the equilibrium contact angle of Al/SiC system increased with increasing Pd implantation dose, which can be mainly attributed to the decreasing interfacial interactions between the Al drop and the SiC substrate. However, the Si concentration had an opposite effect on the wettability of Al/SiC system when the Si concentration was higher or less than the equilibrium Si content of Al-Si/SiC system, which can be related to the variation of ÏSL of Al-Si/SiC system with the Si content.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 335, 15 February 2018, Pages 198-204
Journal: Surface and Coatings Technology - Volume 335, 15 February 2018, Pages 198-204
نویسندگان
Zhikun Huang, Xiangzhao Zhang, Tingting Wang, Guiwu Liu, Haicheng Shao, Yiguo Wan, Guanjun Qiao,