Strain study of GaAs/InxGa1 − xAs/GaAs structures grown by MOVPE

GaAs/InxGa1 − xAs/GaAs strained and partially relaxed structures were grown by metalorganic vapor phase epitaxy and in situ monitored by laser reflectometry (LR). Two structures were formed by a single InxGa1 − xAs layer, and the third comprises three superposed InxGa1 − xAs layers having increasing indium contents. LR plots as function of time were recorded to extract growth rates and thicknesses of active and cap layers. In order to study the strain effect on structural and optical properties of these heterostructures, high resolution X-ray diffraction (HRXRD) and photoreflectance (PR) measurements were performed. HRXRD curves are developed to calculate strain tensor components, indium composition, and thicknesses of strained and partially relaxed layers. Besides, valence-band splitting and band-gap energy shift were measured by best fitting PR spectra at 300 K. Experimental energy values determined as a function of indium composition and relaxation rate were compared to those obtained by the elastic strain theory. For single and superposed InxGa1 − xAs active layers, a good correlation between experimental results and theoretical predictions was obtained.