کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8027398 | 1517620 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure and mechanical properties of a-CNx films prepared by bias voltage assisted PLD with carbon nitride target
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Microstructure and mechanical properties of a-CNx films prepared by bias voltage assisted PLD with carbon nitride target Microstructure and mechanical properties of a-CNx films prepared by bias voltage assisted PLD with carbon nitride target](/preview/png/8027398.png)
چکیده انگلیسی
Amorphous carbon nitride (a-CNx) films were deposited on silicon substrates using pulsed laser deposition technique (PLD) with a carbon nitride target and a negative bias voltage up to â 120 V. The microstructure, chemical composition, bonding configuration and mechanical properties of the films were characterized by using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, nanoindentation and ball-on-disc abrasion test. The results show that the negative bias voltage promotes the formation of sp3 hybridization bonding and leads to a great improvement of nitrogen content (up to 38 at.%) in the films. With an increasing bias voltage from â 40 V to â 120 V, the nitrogen content and the fraction of sp3 hybridization bonding decrease, leading to an increase in graphitization of the films. A direct dependence of the hardness on the content of sp3 hybridization bonding is observed. The friction coefficient of the films ranges from 0.20 to 0.28. The film deposited at a bias voltage of â 40 V presents the highest hardness value of 8.3 GPa.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 258, 15 November 2014, Pages 716-721
Journal: Surface and Coatings Technology - Volume 258, 15 November 2014, Pages 716-721
نویسندگان
Xiao-hua Zheng, Fang-er Yang, Li Chen, Zhan-ling Chen, Ren-guo Song, Xiang-hua Zhang,