کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8027872 | 1517628 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ellipsometric and XPS characterization of transparent nickel oxide thin films deposited by reactive HiPIMS
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We have deposited transparent p-type semiconductive NiO thin films by reactive HiPIMS which appeared to be a powerful method to produce thin films exhibiting gradients of chemical compositions and opto-electronic properties. For a fixed amount of oxygen in the discharge (9%), the influence of the pulse duration was investigated. The position of the valence band with respect to the Fermi level was evaluated by X-ray Photoelectron Spectroscopy (XPS), for two different pulse durations, 15 and 30 μs. We have then investigated the dependence of optical properties of NiO films using spectroscopic ellipsometry (1.5-5.0 eV range). Refractive index n, extinction coefficient k, and gap energy of the NiO films were determined with a refractive index gradient decreasing along the film growth direction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 250, 15 July 2014, Pages 21-25
Journal: Surface and Coatings Technology - Volume 250, 15 July 2014, Pages 21-25
نویسندگان
D.T. Nguyen, A. Ferrec, J. Keraudy, M. Richard-Plouet, A. Goullet, L. Cattin, L. Brohan, P.-Y. Jouan,