کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8029743 | 1517648 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of GeSnSiC layers for photonic applications
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The Sn content in GeSn was carefully determined from the mismatch, both parallel and perpendicular, to the growth direction when the Poisson ratio was calculated for a certain Ge-Sn composition. The X-ray results were excellently consistent with Rutherford Backscattered Spectroscopy (RBS). Strain relaxed GeSn layers were also used as virtual substrate to grow tensile-strained Ge layers. The Ge cap layer had low defect density and smooth surface which makes it a viable candidate material for future photonic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 230, 15 September 2013, Pages 106-110
Journal: Surface and Coatings Technology - Volume 230, 15 September 2013, Pages 106-110
نویسندگان
A. Jamshidi, M. Noroozi, M. Moeen, A. Hallén, B. Hamawandi, J. Lu, L. Hultman, M. Ãstling, H. Radamson,