Electrochemical properties of vanadium oxide coatings grown by APCVD on glass substrates

The growth of vanadium pentoxide was carried out on SiO2-precoated glass substrates by atmospheric pressure chemical vapor deposition at 300 °C. The as-grown coatings were characterized using X-ray diffraction, Raman spectroscopy, scanning electron microscopy and UV-vis spectroscopy. The electrochemical properties of the oxides were evaluated utilizing cyclic voltammetry. The analysis showed that the N2 gas flow rate through the bubbler of the vanadium precursor influenced the structure, morphology and the electrochemical performance of the oxides. X-ray diffraction and Raman spectroscopy revealed the presence of amorphous vanadium pentoxide. Scanning electron microscopy showed granular surface only for the sample grown for flow rate of 0.8 L min− 1, while the others presented featureless surfaces. In addition, the same coating exhibited the best electrochemical activity with maximum attained current density of 0.8 mA cm− 2 and the highest intercalated charge of 9.82 mC cm− 2 due to the presence of single-phase of V2O5. This as-grown oxide reached a specific capacitance of 246 F g− 1.