The deposition of copper-based thin films via atmospheric pressure plasma-enhanced CVD

This work reports for the first time, deposition of copper via an atmospheric pressure-based plasma CVD system. We describe the deposition of both metallic copper and copper/silica-like nano-composite films with composition dependant on, and controlled by, the power applied to the discharge. This is significant, suggesting the potential to select materials properties by control of plasma activation to favour a particular reaction mechanism. The plasma enables film growth under 200 °C, allowing the use of many thermally sensitive substrates. In addition, the approach is scale-able to large areas and may be integrated as a continuous reel to reel process. The films are characterised by XPS, XRD and SEM, with film growth correlated to process conditions. Activity testing of the composite films showed complete killing of Escherichia coli after 1 h, demonstrating the potential for further development and exploitation.