Improvement of electrical properties of silicon oxide thin film with ultraviolet and organic gas assisted annealings

► We formed silicon oxide films at 250 °C using silicone oil and ozone gas. ► To reduce the impurities, the silicon oxide film was annealed with UV and alcohols. ► SiOH bonds were displaced by the SiOCH3 bonds due to the alcohol treatment. ► The cage SiOSi bonds were reduced by the UV irradiation. ► After the UV treatment and alcohol treatment, the dielectric property was improved.