کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8037974 | 1518318 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Cross-sectional atom probe tomography sample preparation for improved analysis of fins on SOI
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Cross-sectional atom probe tomography sample preparation for improved analysis of fins on SOI Cross-sectional atom probe tomography sample preparation for improved analysis of fins on SOI](/preview/png/8037974.png)
چکیده انگلیسی
Sample preparation for atom probe tomography of 3D semiconductor devices has proven to significantly affect field evaporation and the reliability of reconstructed data. A cross-sectional preparation method is applied to state-of-the-art Si finFET technology on SOI. This preparation approach advantageously provides a conductive path for voltage and heat, offers analysis of many fins within a single tip, and improves resolution across interfaces of particular interest. Measured B and Ge profiles exhibit good correlation with SIMS and EDX and show no signs of B clustering or pile-up near the Si/SiGe interface of the fin.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 161, February 2016, Pages 105-109
Journal: Ultramicroscopy - Volume 161, February 2016, Pages 105-109
نویسندگان
Andrew J. Martin, Weihao Weng, Zhengmao Zhu, Rainer Loesing, James Shaffer, Ahmad Katnani,