کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8038025 1518319 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Simulation of the enhancement factor from an individual 3D hemisphere-on-post field emitter by using finite elements method
ترجمه فارسی عنوان
شبیه سازی عامل افزایش از یک فرد نیمهرسانای سه بعدی با استفاده از روش عناصر محدود
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
This paper presents a 3D computational framework for evaluating electrostatic properties of a single field emitter characterized by the hemisphere-on-post geometry. Numerical simulations employed the finite elements method by using Ansys-Maxwell software. Extensive parametric simulations were focused on the threshold distance from which the emitter field enhancement factor (γ) becomes independent from the anode-substrate gap (G). This investigation allowed demonstrating that the ratio between G and the emitter height (h) is a reliable reference for a broad range of emitter dimensions; furthermore, results permitted establishing G/h≥2.2 as the threshold condition for setting the anode without affecting γ.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 160, January 2016, Pages 247-251
نویسندگان
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