کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8038310 | 1518333 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Aberration-corrected STEM/TEM imaging at 15Â kV
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The performance of aberration-corrected (scanning) transmission electron microscopy (S/TEM) at an accelerating voltage of 15 kV was evaluated in a low-voltage microscope equipped with a cold-field emission gun and a higher-order aberration corrector. Aberrations up to the fifth order were corrected by the aberration measurement and auto-correction system using the diffractogram tableau method in TEM and Ronchigram analysis in STEM. TEM observation of nanometer-sized particles demonstrated that aberrations up to an angle of 50 mrad were compensated. A TEM image of Si[110] exhibited lattice fringes with a spacing of 0.192 nm, and the power spectrum of the image showed spots corresponding to distances of 0.111 nm. An annular dark-field STEM image of Si[110] showed lattice fringes of (111) and (22¯0) planes corresponding to lattice distances of 0.314 nm and 0.192 nm, respectively. At an accelerating voltage of 15 kV, the developed low-voltage microscope achieved atomic-resolution imaging with a small chromatic aberration and a large uniform phase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 145, October 2014, Pages 50-55
Journal: Ultramicroscopy - Volume 145, October 2014, Pages 50-55
نویسندگان
Takeo Sasaki, Hidetaka Sawada, Fumio Hosokawa, Yuta Sato, Kazu Suenaga,