Temperature effect on the electron emission and charging of BN-SiO2 under low energy electron irradiation

The BN-SiO2 is widely used as canal material in Hall Effect Thrusters. The electron emission yield under electron impact is considered as a key material parameter that affects the thrust efficiency. The effect of the temperature on the electron emission yield of BN-SiO2 was investigated. It is found that, the electron emission drop significantly when the temperature is increased from 22 °C to 800 °C. The aim here is to report our experimental results and to discuss the representativeness of electron emission data measured on ceramics at room temperature.