کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044244 | 1518917 | 2018 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Studies of early stages of Mn/GaN(0001) interface formation using surface-sensitive techniques
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Non-doped GaN(0001) crystals are used as substrates in this study, on which Mn films are vapour deposited in situ under ultrahigh vacuum (UHV). The early stages of the Mn/GaN(0001) interface formation at room temperature are determined by means of X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and low-energy electron diffraction (LEED). The electron affinity for the already cleaned GaN(0001)-(1â¯Ãâ¯1) surface, achieved by thermal cleaning, is 3.5â¯eV. The binding energy (BE) of the Ga-3d core level line shifts from 20.3â¯eV to 19.8â¯eV and the Mn-3p state from 47.6â¯eV to 47.2â¯eV upon stepwise Mn deposition due to charge transfer, e.g. Schottky barrier (SB) formation. The splitting of the Mn-2p doublet amounts to 11.2â¯eV and the Mn-2p3/2 peak has a BE of 638.7â¯eV, these values corresponding to metallic manganese. The work function of the Mn films with the thickness of 1â¯nm is 3.4â¯eV and slightly decreases to 3.2â¯eV with further overlayer thickness. The SB height of the interface is determined to be 1.2â¯eV. The Mn films show no LEED patterns. The XPS results, generally, show the absence of any interfacial compound formation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 153, July 2018, Pages 12-16
Journal: Vacuum - Volume 153, July 2018, Pages 12-16
نویسندگان
M. Grodzicki, P. Mazur, A. Krupski, A. Ciszewski,