Resistive switching memory based on organic/inorganic hybrid perovskite materials

In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH3NH3PbI3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin-oxide (ITO)/PMMA/CH3NH3PbI3/PMMA/Ag device were investigated in terms of current-voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 103. Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories.