کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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811921 | 906096 | 2014 | 11 صفحه PDF | دانلود رایگان |
Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of a variety of materials. Based on sequential, self-limiting reactions, ALD offers exceptional conformality on high-aspect ratio structures, thickness control at the Angstrom level, and tunable film composition. With these advantages, ALD has emerged as a powerful tool for many industrial and research applications. In this review, we provide a brief introduction to ALD and highlight select applications, including Cu(In,Ga)Se2 solar cell devices, high-k transistors, and solid oxide fuel cells. These examples are chosen to illustrate the variety of technologies that are impacted by ALD, the range of materials that ALD can deposit – from metal oxides such as Zn1−xSnxOy, ZrO2, Y2O3, to noble metals such as Pt – and the way in which the unique features of ALD can enable new levels of performance and deeper fundamental understanding to be achieved.
Journal: - Volume 17, Issue 5, June 2014, Pages 236–246