کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
812052 | 906102 | 2013 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quantum dot field effect transistors
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
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چکیده انگلیسی
Solution processed colloidal semiconductor quantum dots offer a high potential for decreasing costs and expanding versatility of many electronic and optoelectronic devices. Initially used as a research tool to study charge carrier mobilities in closely packed quantum dot thin films, field effect transistors with quantum dots as the active layer have recently experienced a breakthrough in performance (achievement of mobilities higher than 30 cm2 V−1 s−1) as a result of a proper choice of surface ligands and/or improved chemical treatment of the nanoparticle films during device processing. Here we review these innovative developments and the continuing work that may soon lead to commercial grade electronic components.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: - Volume 16, Issue 9, September 2013, Pages 312–325
Journal: - Volume 16, Issue 9, September 2013, Pages 312–325
نویسندگان
Frederik Hetsch, Ni Zhao, Stephen V. Kershaw, Andrey L. Rogach,