کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
812839 906136 2010 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Graphene single-electron transistors
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Graphene single-electron transistors
چکیده انگلیسی

Graphene, a single layer of carbon atoms forming a perfectly stable and clean two-dimensional crystal with very few defects, has been proclaimed to be a new revolutionary material for electronics. These hopes rest mainly on the unique band structure properties of graphene. Although living essentially on the surface, electron mobilities in this material do not suffer extensively from surface contaminations and are surprisingly high even at room temperature. In comparison to extremely high quality semiconducting materials, such as Silicon and GaAs, the understanding of electronic transport in graphene is still in its infancy. Research on nanoscale transistors switching with only a single electron exemplifies that there are a number of unresolved problems that material scientists should tackle in the future for making the graphene dreams come true.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: - Volume 13, Issue 3, March 2010, Pages 44–50
نویسندگان
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