کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
813373 | 1469187 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Diamond as an electronic material
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
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چکیده انگلیسی
The combination of extreme electronic and thermal properties found in synthetic diamond produced by chemical vapor deposition (CVD) is raising considerable excitement over its potential use as a semiconductor material. Experimental studies have demonstrated charge-carrier mobilities1 of >3000 cm2V−1s−1 and thermal conductivities2 >2000 Wm−1K−1. The material has been predicted to have a breakdown field strength in excess of 10 MVcm−1. These figures suggest that, providing a range of technical challenges can be overcome, diamond would be particularly well suited to operation as a semiconductor material wherever high frequencies, high powers, high temperatures or high voltages are required.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: - Volume 11, Issues 1–2, January–February 2008, Pages 22–28
Journal: - Volume 11, Issues 1–2, January–February 2008, Pages 22–28
نویسندگان
Chris J.H. Wort, Richard S. Balmer,