کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
814196 | 906182 | 2006 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ferromagnetism in oxide semiconductors
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
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چکیده انگلیسی
Over the past five years, considerable work has been carried out in the exploration of candidate diluted oxide magnetic semiconductors with high Curie temperatures. Fueled by early experimental results and theoretical predictions, claims of ferromagnetism at and above room temperature in doped oxides have abounded. In general, neither the true nature of these materials nor the physical causes of the magnetism have been adequately determined. It is now apparent that these dilute magnetic systems are deceptively complex. We consider two well-characterizedn-type magnetically doped oxide semiconductors and explore the relationship between donor electrons and ferromagnetism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: - Volume 9, Issue 11, November 2006, Pages 28–35
Journal: - Volume 9, Issue 11, November 2006, Pages 28–35
نویسندگان
S.A. Chambers, T.C. Droubay, C.M. Wang, K.M. Rosso, S.M. Heald, D.A. Schwartz, K.R. Kittilstved, D.R. Gamelin,