کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148384 | 1524332 | 2018 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nucleation and islands growth of CdZnTe(0â¯0â¯1) epitaxial films on GaAs(0â¯0â¯1) substrates by close spaced sublimation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The early stages of close spaced sublimation growth of CdZnTe(0â¯0â¯1)/GaAs(0â¯0â¯1) epilayer were experimentally studied under different substrate temperatures and ambient pressures. SEM, AFM, XRD, EBSD and EDS were used for the characterization of morphology, structure and composition of the films. The films were found to be (0â¯0â¯1) oriented and epitaxial in nature with zinc blende cubic structure. Deposition models were used to explain the correlation between growth condition and CdZnTe island morphology. Films grown at 350â¯Â°C and 1â¯Ãâ¯102â¯Pa show the best uniform and smooth surface. When increasing substrate temperature to 430â¯Â°C or ambient pressure to 1â¯Ãâ¯104â¯Pa or 3â¯Ãâ¯104â¯Pa, islands are less compact and exhibit preferential growth along one ofâ¯ã1â¯1â¯0ãâ¯directions, which could be resulted from the big lattice mismatch (14.0%) of Cd0.9Zn0.1Te(0â¯0â¯1)/GaAs(0â¯0â¯1) heterojunction. For the growth at 430â¯Â°C in 3â¯Ãâ¯104â¯Pa, prior nucleation at defect site was found, and the appearance of regularâ¯ã0â¯1â¯0ãâ¯oriented island edges proposes that stepsâ¯ã0â¯1â¯0ã{1â¯0â¯0} are more stable for CdZnTe(0â¯0â¯1)/GaAs(0â¯0â¯1) epilayer than stepsâ¯ã1â¯1â¯0ã{1â¯1â¯1}.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 498, 15 September 2018, Pages 197-201
Journal: Journal of Crystal Growth - Volume 498, 15 September 2018, Pages 197-201
نویسندگان
Kun Cao, Wanqi Jie, Gangqiang Zha, Tingting Tan, Yingrui Li, Ruiqi Hu,