کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148420 | 1524334 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation on the influence of high deposition pressure on the mcirostructure and hydrogen impurity incorporated in nanocrystalline diamond films
ترجمه فارسی عنوان
بررسی تأثیر فشار بالا بر روی ساختار شیمیایی و افزودنی هیدروژن در فیلمهای الماس نانوکریستال
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کلمات کلیدی
فشار رسانا بالا، الماس نانوکریستال، ناخالصی هیدروژن، پلاسمای مایکروویو، رسوبات بخار شیمیایی،
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
The impact of high deposition pressure on the microstructure and incorporation hydrogen impurity within nanocrystalline diamond (NCD) films have been investigated in a home-made microwave plasma chemical vapor deposition (MPCVD) apparatus when the microwave power and the substrate temperature were kept constant at 800â¯W and 650â¯Â°C, respectively. It is found that high deposition pressure not only influences the grain size and quality, but has conception link with the form and content of the bonded-H incorporated in NCD films. With the deposition pressure increases from 10â¯kPa to 30â¯kPa, the average grain size decreases from 33â¯nm to 13â¯nm and a large amount of hydrogen is detected in the obtained NCD films by Fourier transform infrared spectroscopy (FTIR). Particularly, the NCD films deposited at 15â¯kPa possesses the largest amount of the bonded H impurity. The optical emission spectroscopy (OES) from the plasma indicates that the intensity ratio between Hα and C2 decreases with the increase of the deposition pressure, which suggests the decline energy levels for the excited H atoms. Based on these experimental results the role of high deposition pressure on the growth of NCD films is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 495, 1 August 2018, Pages 1-8
Journal: Journal of Crystal Growth - Volume 495, 1 August 2018, Pages 1-8
نویسندگان
J. Weng, F. Liu, L.W. Xiong, A. Bai, J.H. Wang,