کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8148766 1524343 2018 18 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystal growth and temperature dependence of light output of Ce-doped (Gd, La, Y)2Si2O7 single crystals
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Crystal growth and temperature dependence of light output of Ce-doped (Gd, La, Y)2Si2O7 single crystals
چکیده انگلیسی
Ce-doped (Gd, La)2Si2O7 scintillation crystals are expected to be used as gamma-ray detectors for high temperature measurement. To realize scintillators for high temperature environment, we investigated (Ce0.01 Gd0.59−x La0.40 Yx)2Si2O7 (x = 0.00, 0.05, 0.10, 0.15) single crystals grown by the micro-pulling-down method. The results showed that a 5% Y-admixed Ce-doped (Gd, La)2Si2O7 scintillator can yield higher light output when compared with Y-free Ce-doped (Gd, La)2Si2O7 scintillator. The light outputs at 25°C and 175°C were determined to be ∼43,000 and ∼40,000 photons/MeV, respectively. Moreover, 1 inch size 5% Y-admixed Ce-doped (Gd, La)2Si2O7 scintillator was grown by the Czochralski technique, and its light output at 175°C kept the value of around 95% of the value at 25°C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 486, 15 March 2018, Pages 173-177
نویسندگان
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